| PART |
Description |
Maker |
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| HMC548LP3 HMC548LP3E |
SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz
|
Hittite Microwave Corporation
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs
|
| NESG2031M16-T3 NESG2031M16-T3-A NESG2031M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| HMC476SC70 HMC476SC70E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMC479ST89E HMC479ST8910 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
|
Hittite Microwave Corporation
|
| HMC476SC7010 476SC70E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
